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| FDS8670 30V N-Channel PowerTrench(R) MOSFET September 2005 FDS8670 30V N-Channel PowerTrench(R) MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features * * * * * 21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V Max RDS(ON) = 5.0 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 typical) RoHS Compliant Applications * High Efficiency DC-DC Converters: * Notebook Vcore Power Supply * Telecom Brick Synchronous Rectifier * Multi purpose Point Of Load D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Drain-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 16 (Note 1a) Units V V A W 21 105 2.5 1.2 1 -55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W Package Marking and Ordering Information Device Marking FDS8670 Device FDS8670 Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min Typ Max Units 30 39 1 100 V mV/C A nA Off Characteristics ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 16 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A 1 1.4 -5 3.3 4.2 4.4 118 3 V mV/C ID = 250 A, Referenced to 25C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A 3.7 5.0 5.5 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V, 4040 1730 160 0.2 0.9 1.5 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 11 56 68 21 20 90 108 82 42 ns ns ns ns nC nC nC nC Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 21 A 58.5 30 9.5 5.5 Drain-Source Diode Characteristics and Maximum Ratings VSD trr IRM Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 51 1.5 37 1.2 V ns A nC IF = 21 A, dIF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when 2 mounted on a 1 in pad of 2 oz copper b) 105/W when 2 mounted on a .04 in pad of 2 oz copper c) 125/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET Typical Characteristics 105 VGS = 10V 87.5 ID, DRAIN CURRENT (A) 6.0V 70 4.5V 52.5 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.4 VGS = 2.5V 2.8 2.2 3.0V 1.6 35 3.5V 2.5V 4.0V 4.5V 6.0V 17.5 1 10V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.4 0 35 70 ID, DRAIN CURRENT (A) 105 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.011 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 21A VGS = 10V ID = 10.5A 1.4 0.008 1.2 1 TA = 125oC 0.005 0.8 TA = 25oC 0.002 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 105 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 100 10 TA = 125oC ID, DRAIN CURRENT (A) 70 1 0.1 0.01 0.001 25oC -55oC 35 TA =125oC -55oC 25 C o 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 20V CAPACITANCE (pF) 5000 f = 1MHz VGS = 0 V 4000 VDS = 10V 6 15V 4 Ciss 3000 2000 Coss 2 1000 Crss 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 80 SINGLE PULSE RJA = 125C/W TA = 25C RDS(ON) LIMIT 10 10s 100s 1ms 10ms 100ms 1s DC 60 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C o 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W 0.1 0.1 0.05 0.02 P(pk) t1 t2 SINGLE PULSE 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8670 Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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